Yunhai Xiong | 2D Materials | Best Researcher Award

Published on by China Scientist

Dr. Yunhai Xiong | 2D Materials | Best Researcher Award 

Yunhai Xiong is a researcher at the School of Materials Science and Engineering, Nanjing University of Science and Technology. His work focuses on the classification, synthesis, and application of 2D nonlayered materials, specializing in chemical vapor deposition (CVD) techniques and atomic-scale characterization. He has made significant contributions to understanding the physical properties of these materials and their applications in next-generation transistors. With expertise in material synthesis, spectroscopic analysis, and device fabrication, his research aims to advance the development of high-performance electronic materials.

Dr. Yunhai Xiong | Nanjing University of Science and Technology | China

Profile

SCOPUS ID

ORCID ID

🎓Education

  • Yunhai Xiong holds a degree in Materials Science and Engineering, specializing in the synthesis and characterization of advanced materials. His academic background has provided him with a strong foundation in chemical vapor deposition (CVD) techniques and the study of two-dimensional materials.

👨‍🏫Experience

  • With extensive experience in materials research, Yunhai Xiong has conducted in-depth studies on nonlayered materials, exploring their chemical composition, crystal structures, and unique properties. He has worked on optimizing CVD growth methods to synthesize high-quality 2D materials and has utilized spectroscopic and atomic-scale characterization techniques to investigate their physical behaviors. His research extends to the development of next-generation electronic devices, particularly transistors, where he has contributed to advancing material applications.

🏆Awards and Recognitions

  • Throughout his career, Yunhai Xiong has received recognition for his contributions to materials science, earning prestigious awards for his research on 2D materials and their applications in electronics. His work has been acknowledged in leading scientific conferences and journals, reflecting the impact of his findings on the field.

💡Skills and Certifications

  • Yunhai Xiong possesses expertise in chemical vapor deposition, spectroscopic analysis, atomic-scale characterization, and device fabrication. His proficiency in material synthesis and analysis allows him to develop innovative approaches for studying nonlayered materials and their electronic applications.

🔬 Research Focus

  • His research primarily revolves around the classification, synthesis, and application of 2D nonlayered materials. By tailoring CVD techniques for specific material systems, he aims to improve the quality and scalability of 2D specimens. His studies on physical properties and structural characteristics provide valuable insights into their potential for electronic applications, particularly in transistor technology. Through his work, he seeks to pave the way for future advancements in the field of 2D materials and their integration into cutting-edge electronic devices.

🌎Conclusion

  • Given his exceptional research contributions, strong publication record, and innovative impact on multiple scientific disciplines, Yunhai Xiong is highly suitable for the Best Researcher Award. His work continues to push the boundaries of 2D material applications, making him a deserving candidate for recognition in scientific excellence.

📖Publications

  • Vapour–liquid–solid–solid growth of two-dimensional non-layered β-Bi₂O₃ crystals with high hole mobility
    Authors: Yunhai Xiong, Duo Xu, Yousheng Zou, Lili Xu, Yujie Yan, Jianghua Wu, Chen Qian, Xiufeng Song, Kairui Qu, Tong Zhao et al.
    Journal: Nature Materials

  • Moiré Engineering of Spin–Orbit Torque by Twisted WS₂ Homobilayers
    Authors: Xiaorong Liang, Penghao Lv, Yunhai Xiong, Xi Chen, Di Fu, Yiping Feng, Xusheng Wang, Xiang Chen, Guizhou Xu, Erjun Kan et al.
    Journal: Advanced Materials

  • P‐Type 2D Semiconductors for Future Electronics
    Authors: Yunhai Xiong, Duo Xu, Yiping Feng, Guangjie Zhang, Pei Lin, Xiang Chen
    Journal: Advanced Materials

  • Ultrasensitive photodetector based on 2D WS₂/AgInGaS quantum dots heterojunction with interfacial charge transfer
    Authors: Xusheng Wang, Danni Yan, Cheng Zhu, Yiping Feng, Tingting Guo, Runmeng Jia, Kairui Qu, Linyun Li, Tong Zhao, Yunhai Xiong et al.
    Journal: 2D Materials

  • Fast and direct identification of SARS‐CoV‐2 variants via 2D InSe field‐effect transistors
    Authors: Duo Xu, Junji Li, Yunhai Xiong, Han Li, Jialin Yang, Wenqiang Liu, Lianfu Jiang, Kairui Qu, Tong Zhao, Xinyu Shi et al.
    Journal: InfoMat

Kaixi Shi | Two-dimensional Material | Best Researcher Award

Published on by China Scientist

Dr. Kaixi Shi | Two-dimensional Material | Best Researcher Award

Dr. Kaixi Shi is a Lecturer at the School of Physics, Changchun University of Science and Technology, China. She completed her PhD in Physics at Northeast Normal University in 2018 and holds a Bachelor’s degree from Harbin Normal University. Her research focuses on photoelectric devices based on low-dimensional materials, particularly in areas like information storage, photodetection, and artificial intelligence. She has made significant contributions to plasmonic photodetectors, self-powered photovoltaic devices, and engineered heterostructures, publishing over 20 SCI-indexed papers and holding 8 national invention patents. Dr. Shi has led and participated in multiple scientific research projects, including those funded by Jilin Provincial Science and Technology Department.

Dr. Kaixi Shi | Changchun University of Science and Technology | China

Profile

SCOPUS  ID

🎓 Education

  • Dr. Kaixi Shi obtained her Doctorate in Physics from Northeast Normal University, China, from 2012 to 2018. Prior to that, she earned her Bachelor’s degree in Physics from Harbin Normal University, China, from 2008 to 2012.

💼 Experience

  • Dr. Shi is currently a Lecturer at the School of Physics, Changchun University of Science and Technology, China, a position she has held since January 2021. Before this, she worked as a Postdoctoral Fellow at the same institution from December 2018 to January 2021.

 🏆 Honors and Awards

  • Throughout her career, Dr. Shi has presided over and participated in 11 scientific research projects, including a Project of Jilin Provincial Science and Technology Department and a Project of Jilin Provincial Education Department, alongside several national projects. She has also filed 8 national invention patents and published over 20 SCI-indexed papers.

🛠️ Skills and Certifications

  • Dr. Shi’s expertise lies in the development and application of low-dimensional materials for optoelectronic devices, including in areas such as information storage, photodetection, and artificial intelligence. She has specialized knowledge in the field of plasmonic photodetectors, self-powered photovoltaic devices, and interfacial engineered heterostructures.

🔬 Research Focus

  • Dr. Shi’s primary research interests involve photoelectric devices based on low-dimensional materials. She has made significant contributions to the field, including proposing the first self-powered PV characteristic to simulate short-term synaptic plasticity for low-power artificial neural networks. Additionally, she has introduced a novel Al@Al2O3 core-shell plasma structure in plasmonic photodetectors to balance the trade-off between high response rate and low dark current. She also designed an interfacial engineered heterostructure with a gradient band arrangement to achieve nanosecond-scale response speed, improving the separation efficiency of photogenerated carriers through Cu-plasmon-induced charge transfer.

Conclusion

  • Dr. Kaixi Shi is a highly deserving candidate for the Research for Best Researcher Award. Her significant contributions to material science and optoelectronic devices, along with her leadership in research and innovation, have placed her at the cutting edge of technological advancements. Dr. Shi’s work is not only academically impactful but also practically relevant, shaping the future of AI and energy-efficient devices.

📄Publications

  • Electronic and optical properties of CsSnI3/MoS2 heterostructure as ultrabroadband photoelectric device
    Authors: Tan, F., Liu, F., Li, J., Shi, K.
    Journal: Applied Surface Science, 2024, 678, 161048
  • Al@Al2O3 core-shell plasmonic design for the dilemma between high responsivity and low dark current of MoS2 photodetector
    Authors: Shen, Z., Wang, W., Xu, Z., Fang, X., Xu, M.
    Journal: Applied Physics Letters, 2024, 125(22), 222105
  • Rational design of MoS2/CNT heterostructure with rich S-vacancy for enhanced HER performance
    Authors: Sun, Y., Li, J., Wang, Z., Shi, K., Zhai, Y.
    Journal: Journal of Chemical Physics, 2024, 161(18), 184705
  • A high-performance WS2/ZnO QD heterojunction photodetector with charge and energy transfer
    Authors: Zheng, Y., Xu, Z., Shi, K., Jiang, Z., Chu, X.
    Journal: Journal of Materials Chemistry C, 2024, 12(45), pp. 18291–18299
  • Pollution-free interface of 2D-MoS2/1D-CuO vdWs heterojunction for high-performance photodetector
    Authors: Yang, H., Luo, R., Shi, K., Qu, G., Fang, X.
    Journal: Nanotechnology, 2024, 35(10), 105202